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 STH270N4F3-6
N-channel 40 V, 1.40 m 180 A, H2PAK , STripFETTM III Power MOSFET
Features
Type STH270N4F3-6 VDSS 40 V RDS(on) < 1.7 m ID (1) 180 A TAB
1. Current limited by package
Conduction losses reduced Low profile, very low parasitic inductance, high current package
1 H2PAK-6l
7
Applications
Switching application - Automotive Figure 1. Internal schematic diagram
Description
This STripFETTM III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performance.
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Table 1.
Device summary
Order code Marking 270N4F3 Package H
2PAK
Packaging Tape and reel
STH270N4F3-6
January 2010
Doc ID 16957 Rev 1
1/13
www.st.com 13
Contents
STH270N4F3-6
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics .................................... 6
3 4 5 6
Test circuits
.............................................. 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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STH270N4F3-6
Electrical ratings
1
Electrical ratings
Table 2.
Symbol VDS VGS ID (1) ID IDM (1) PTOT (2)
Absolute maximum ratings
Parameter Drain-source voltage (vgs = 0) Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Derating factor Value 40 20 180 180 720 300 2 1000 -55 to 175 Operating junction temperature Unit V V A A A W W/C mJ C
EAS (3) Tstg Tj
Single pulse avalanche energy Storage temperature
1. Current limited by package 2. This value is rated according to Rthj-c 3. Starting Tj = 25 C, ID = 80 A, VDD = 32 V
Table 3.
Symbol Rthj-case
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Thermal data
Parameter Thermal resistance junction-case max Value 0.5 35 Unit C/W C/W
Rthj-pcb (1) Thermal resistance junction-pcb max
1. When mounted on 1 inch2 FR-4 2 oz Cu.
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Electrical characteristics
STH270N4F3-6
2
Electrical characteristics
(Tcase =25C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On /off states
Parameter Drain-source breakdown voltage Test conditions ID = 250A, VGS= 0 Min. 40 10 100 200 2 1.40 4 1.70 Typ. Max. Unit V A A nA V m
VDS = Max rating, Zero gate voltage drain current (VGS = 0) VDS = Max rating, Tc=125C Gate body leakage current (VDS = 0) VDS = 20V
Gate threshold voltage VDS= VGS, ID = 250A Static drain-source on resistance VGS= 10V, ID= 80A
Table 5.
Symbol gfs (1) Ciss Coss Crss Qg
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Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 10V, ID= 100A Min. Typ. 200 7400 1800 50 110 30 25 150 Max. Unit S pF pF pF nC nC nC
VDS = 25V, f = 1 MHz, VGS =0
VDD= 20V, ID= 160A, VGS= 10V (see Figure 14)
Qgs Qgd
1.
Pulsed: Pulse duration = 300 s, duty cycle 1.5%
Table 6.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Test conditions VDD = 20V, ID = 80A RG= 4.7 VGS= 10V, , (see Figure 13) VDD = 20V, ID = 80A , RG= 4.7 VGS= 10V, (see Figure 13) Min. Typ. 25 180 Max Unit ns ns
Turn-off delay time Fall time
110 45
ns ns
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STH270N4F3-6
Electrical characteristics
Table 7.
Symbol ISD ISD (1) VSD (2) trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 180 A, VGS = 0 ISD = 160 A,di/dt = 100A/s VDD = 32V, Tj = 150C (see Figure 15) 70 225 3.2 Test conditions Min. Typ. Max. Unit 180 720 1.5 A A V ns nC A
1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5%
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Electrical characteristics
STH270N4F3-6
2.1
Figure 2.
ID (A) 10
3
Electrical characteristics (curves)
Safe operating area
AM01500v1 Tj=175C Tc=25C Single pulse
Figure 3.
Thermal impedance
102
1
is rea n) sa thi ds(o in R ion ax rat y M pe ed b O it lim
100s 1ms 10ms
10
10 0 10-1 10-1
10
0
10
1
VDS(V)
Figure 4.
Output characteristics
AM01502v1
Figure 5.
Transfer characteristics
AM01503v1
ID(A) 450 400 350 300 250 200 150 100 50 www..com 0 0
VGS=10V 5V
ID(A) 450 400 350 300 250 200 150 100 4V 50 0 0 2 4 6 8 VGS(V) VDS=5V TC=25C
2
4
6
VDS(V)
Figure 6.
RDS(on) (m) 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 0
Static drain-source on resistance
AM00891v2
Figure 7.
Normalized BVDSS vs temperature
VGS=10V
40
80
120
ID(A)
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STH270N4F3-6 Figure 8. Gate charge vs gate-source voltage Figure 9.
Electrical characteristics Capacitance variations
Figure 10. Normalized gate threshold voltage vs temperature
Figure 11. Normalized on resistance vs temperature
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Figure 12. Source-drain diode forward characteristics
AM04229v1
VSD (V) 0.95 0.90 0.85 0.80 0.75 0.70 0.65 0.60 0.55 0.50 0.45 0.40 0 20 40 60 80 100 120 140 160 180 ISD(A) TJ=175C TJ=-50C
TJ=25C
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Test circuits
STH270N4F3-6
3
Test circuits
Figure 14. Gate charge test circuit
Figure 13. Switching times test circuit for resistive load
Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit
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Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
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Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 8.
Dim. Min. A A1 C e e1 e2 E F H H1 L L1 L2 L3 L4 4.30 0.03 1.17 2.34 4.88 7.42 0.45 0.50 10.00 7.80 14.75 1.27 4.35 7.45 1.5 1.90 0.20 0 8.20 15.25 1.40 4.95 7.85 1.75 2.50 0.60 8 Typ. Max. 4.80 0.20 1.37 2.74 5.28 7.82 0.60 0.70 10.40
HPAK 6 leads mechanical data
mm
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M R V
Doc ID 16957 Rev 1
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Package mechanical data Figure 19. HPAK 6 leads drawing
STH270N4F3-6
Figure 20. HPAK 6 leads recommended footprint (dimensions in mm)
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Packaging mechanical data
5
Packaging mechanical data
Figure 21. HPAK 6 leads tape and reel
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T
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BASE QTY 1000
mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1
inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574
0.35 0.0098 0.0137 0.933 0.956
W
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Revision history
STH270N4F3-6
6
Revision history
Table 9.
Date 15-Jan-2010
Document revision history
Revision 1 Initial release Changes
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Doc ID 16957 Rev 1
STH270N4F3-6
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.
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Doc ID 16957 Rev 1
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